Semiconductors are materials with unique electrical properties, bridging the gap between conductors and insulators. This topic dives into their composition, structure, and energy bands, laying the foundation for understanding their behavior in electronic devices.
We'll explore intrinsic and extrinsic semiconductors, focusing on how affects their properties. We'll also examine the temperature dependence of semiconductor , crucial for various applications in modern electronics.
Semiconductor Materials
Composition and Structure
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Semiconductors are materials with electrical conductivity between conductors (metals) and insulators (ceramics)
is the most commonly used semiconductor material in electronics
Abundant, inexpensive, and has a stable oxide layer
was used in early semiconductor devices but has been largely replaced by silicon
Has a smaller band gap and higher electron mobility compared to silicon
Semiconductor materials have a crystal structure, typically arranged in a diamond cubic lattice
Each atom is covalently bonded to four neighboring atoms, forming a regular and repeating pattern
Energy Bands and Band Gap
Electronic Structure
Energy bands represent the allowed energy levels for electrons in a solid material
Determined by the periodic potential of the atomic lattice
Valence band is the highest occupied energy band at absolute zero temperature
Contains the valence electrons involved in chemical bonding
Conduction band is the lowest unoccupied energy band
Electrons in the conduction band are free to move and contribute to electrical conduction
Band gap is the energy difference between the top of the valence band and the bottom of the conduction band
Determines the electrical properties of the material (conductor, insulator, or semiconductor)
For semiconductors, the band gap is typically in the range of 0.5 to 3 eV (electron volts)
Electron Excitation and Conduction
At absolute zero, the valence band is completely filled, and the conduction band is empty
No electrical conduction occurs
As temperature increases, electrons can gain enough thermal energy to be excited from the valence band to the conduction band
Leaves behind positively charged holes in the valence band
Both electrons and holes contribute to electrical conduction
The probability of electron excitation depends on the band gap and temperature
Smaller band gap and higher temperature lead to more electrons in the conduction band
Semiconductor Types and Properties
Intrinsic Semiconductors
Intrinsic semiconductors are pure semiconductor materials without any intentional impurities (dopants)
Examples include pure silicon and germanium
Electrical conductivity in intrinsic semiconductors is due to the thermal excitation of electrons from the valence band to the conduction band
Equal number of electrons and holes are generated
The concentration of electrons and holes in intrinsic semiconductors is relatively low, resulting in low electrical conductivity
Typically in the range of 10^-8 to 10^-6 S/cm (siemens per centimeter) at room temperature
Extrinsic Semiconductors
Extrinsic semiconductors are intentionally doped with impurities to modify their electrical properties
Dopants can be either donors () or acceptors ()
N-type semiconductors are doped with donor impurities that provide extra electrons to the conduction band
Examples of donor dopants include phosphorus and arsenic in silicon
P-type semiconductors are doped with acceptor impurities that create extra holes in the valence band
Examples of acceptor dopants include boron and gallium in silicon
Doping increases the concentration of charge carriers (electrons or holes) and enhances electrical conductivity
Typically in the range of 10^-3 to 10^3 S/cm, depending on the doping level
Temperature Dependence
The electrical conductivity of semiconductors strongly depends on temperature
As temperature increases, more electrons are thermally excited from the valence band to the conduction band
Leads to an exponential increase in the concentration of charge carriers (electrons and holes)
The temperature dependence of electrical conductivity in semiconductors can be described by the Arrhenius equation:
σ=σ0exp(−Ea/kT)
σ is the electrical conductivity, σ0 is a constant, Ea is the activation energy (related to the band gap), k is the Boltzmann constant, and T is the absolute temperature
The strong temperature dependence of semiconductor properties is exploited in various applications
Examples include temperature sensors (thermistors) and thermal imaging devices