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Doping semiconductors is a game-changer in electronics. By adding impurities, we can create n-type and p-type materials with different electrical properties. This process is crucial for making devices like , , and solar cells.

N-type doping adds extra electrons, while p-type doping creates holes. These changes affect how electricity flows through the material, allowing us to control and manipulate current in ways that power our modern world.

Doping in semiconductors

  • Doping is the intentional introduction of impurities into intrinsic semiconductors to modify their electrical properties
  • The type and concentration of dopants determine the characteristics of the resulting extrinsic semiconductor
  • Doping enables the creation of n-type and p-type semiconductors, which are essential for various electronic devices

n-type vs p-type doping

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  • n-type doping involves adding impurities with extra valence electrons (donors) to create an excess of negative charge carriers (electrons)
  • p-type doping involves adding impurities with fewer valence electrons (acceptors) to create an excess of positive charge carriers (holes)
  • The type of doping determines the majority charge carriers in the semiconductor (electrons in n-type, holes in p-type)

Intrinsic vs extrinsic semiconductors

  • Intrinsic semiconductors are pure materials with equal numbers of electrons and holes generated by (silicon, germanium)
  • Extrinsic semiconductors are created by doping intrinsic semiconductors with impurities to modify their electrical properties
  • Doping creates an imbalance in the number of electrons and holes, leading to the formation of n-type or p-type semiconductors

Donor and acceptor impurities

  • Donor impurities have extra valence electrons compared to the host semiconductor material (group V elements in silicon: , arsenic)
  • Acceptor impurities have fewer valence electrons compared to the host semiconductor material (group III elements in silicon: , aluminum)
  • Donors contribute free electrons to the , while acceptors create holes in the

Fermi level shifts from doping

  • The represents the energy level with a 50% probability of being occupied by an electron at equilibrium
  • In intrinsic semiconductors, the Fermi level lies near the middle of the bandgap
  • n-type doping shifts the Fermi level closer to the conduction band, while p-type doping shifts it closer to the valence band
  • The shift in the Fermi level affects the electrical properties of the semiconductor, such as and carrier concentrations

Characteristics of n-type semiconductors

  • n-type semiconductors are created by doping intrinsic semiconductors with donor impurities
  • The addition of donor atoms increases the concentration of free electrons in the conduction band
  • n-type semiconductors have electrons as the majority charge carriers and holes as the minority carriers

Majority carriers in n-type

  • In n-type semiconductors, electrons are the majority charge carriers
  • The concentration of electrons in the conduction band is much higher than the concentration of holes in the valence band
  • The excess electrons are contributed by the donor impurities, which have extra valence electrons compared to the host semiconductor material

Electron energy levels in n-type

  • Donor impurities create discrete energy levels near the conduction band in n-type semiconductors
  • These energy levels are typically a few meV below the conduction band edge
  • At room temperature, electrons from the donor levels can easily be excited into the conduction band, contributing to the free

Conductivity changes in n-type

  • The addition of donor impurities in n-type semiconductors increases the concentration of free electrons in the conduction band
  • Higher electron concentration leads to an increase in the electrical conductivity of the semiconductor
  • The conductivity of n-type semiconductors is proportional to the product of electron concentration and electron

Examples of n-type dopants

  • Common n-type dopants for silicon include phosphorus (P), arsenic (As), and antimony (Sb)
  • In gallium arsenide (GaAs), silicon (Si) and tellurium (Te) are often used as n-type dopants
  • The choice of dopant depends on factors such as the desired doping concentration, , and solid solubility in the host material

Characteristics of p-type semiconductors

  • p-type semiconductors are created by doping intrinsic semiconductors with acceptor impurities
  • The addition of acceptor atoms increases the concentration of holes in the valence band
  • p-type semiconductors have holes as the majority charge carriers and electrons as the minority carriers

Majority carriers in p-type

  • In p-type semiconductors, holes are the majority charge carriers
  • The concentration of holes in the valence band is much higher than the concentration of electrons in the conduction band
  • The excess holes are created by the acceptor impurities, which have fewer valence electrons compared to the host semiconductor material

Electron energy levels in p-type

  • Acceptor impurities create discrete energy levels near the valence band in p-type semiconductors
  • These energy levels are typically a few meV above the valence band edge
  • At room temperature, electrons from the valence band can easily be excited into the acceptor levels, leaving behind holes in the valence band

Conductivity changes in p-type

  • The addition of acceptor impurities in p-type semiconductors increases the concentration of holes in the valence band
  • Higher leads to an increase in the electrical conductivity of the semiconductor
  • The conductivity of p-type semiconductors is proportional to the product of hole concentration and hole mobility

Examples of p-type dopants

  • Common p-type dopants for silicon include boron (B), aluminum (Al), and gallium (Ga)
  • In gallium arsenide (GaAs), zinc (Zn) and carbon (C) are often used as p-type dopants
  • The choice of dopant depends on factors such as the desired doping concentration, ionization energy, and solid solubility in the host material

Charge carrier concentrations

  • The concentration of charge carriers (electrons and holes) in a semiconductor determines its electrical properties
  • In intrinsic semiconductors, the concentrations of electrons and holes are equal and depend on the bandgap and temperature
  • Doping alters the carrier concentrations, creating an imbalance between electrons and holes

Intrinsic carrier concentration

  • The intrinsic carrier concentration (nin_i) represents the number of electrons and holes in an intrinsic semiconductor at thermal equilibrium
  • nin_i depends on the bandgap (EgE_g) and temperature (TT) according to the equation: ni=NcNvexp(Eg/2kBT)n_i = \sqrt{N_c N_v} \exp(-E_g/2k_BT), where NcN_c and NvN_v are the effective densities of states in the conduction and valence bands, and kBk_B is the Boltzmann constant
  • For silicon at room temperature, ni1010cm3n_i \approx 10^{10} cm^{-3}

Majority and minority carrier densities

  • In n-type semiconductors, the electron concentration (nn) is much higher than the hole concentration (pp), i.e., npn \gg p
  • In p-type semiconductors, the hole concentration (pp) is much higher than the electron concentration (nn), i.e., pnp \gg n
  • The product of the electron and hole concentrations is equal to the square of the intrinsic carrier concentration: np=ni2np = n_i^2 ()

Temperature dependence of carrier concentrations

  • The intrinsic carrier concentration (nin_i) increases exponentially with temperature due to the increased thermal excitation of electrons from the valence band to the conduction band
  • In doped semiconductors, the majority carrier concentration is less sensitive to temperature changes, as it is primarily determined by the doping concentration
  • The minority carrier concentration in doped semiconductors is strongly dependent on temperature, as it is related to the intrinsic carrier concentration

Charge neutrality in doped semiconductors

  • In a doped semiconductor, the total charge of the ionized donors (ND+N_D^+) and acceptors (NAN_A^-) must be balanced by the total charge of the free electrons (nn) and holes (pp) to maintain
  • For n-type semiconductors: n+NA=p+ND+n + N_A^- = p + N_D^+, and if the doping is not too high, nND+n \approx N_D^+
  • For p-type semiconductors: p+ND+=n+NAp + N_D^+ = n + N_A^-, and if the doping is not too high, pNAp \approx N_A^-

Mobility of charge carriers

  • Mobility is a measure of how easily charge carriers (electrons and holes) can move through a semiconductor under the influence of an electric field
  • The mobility of charge carriers affects the conductivity and performance of semiconductor devices
  • Doping concentration and temperature are two main factors that influence carrier mobility

Electron and hole mobilities

  • Electron mobility (μe\mu_e) and hole mobility (μh\mu_h) are measures of the ease with which electrons and holes move through a semiconductor, respectively
  • In most semiconductors, electron mobility is higher than hole mobility due to the lower effective mass of electrons compared to holes
  • For intrinsic silicon at room temperature, μe1400cm2/Vs\mu_e \approx 1400 cm^2/Vs and μh450cm2/Vs\mu_h \approx 450 cm^2/Vs

Factors affecting carrier mobility

  • Lattice scattering: Vibrations of the crystal lattice (phonons) can scatter charge carriers, reducing their mobility
  • Ionized impurity scattering: Charged donor and acceptor ions in doped semiconductors can scatter charge carriers, reducing their mobility
  • Carrier-carrier scattering: Interactions between charge carriers can lead to scattering, especially at high carrier concentrations
  • Temperature: Increased temperature leads to stronger lattice vibrations, which increases scattering and reduces mobility

Mobility changes from doping concentration

  • As the doping concentration increases, the number of ionized impurities in the semiconductor also increases
  • Higher ionized impurity concentration leads to increased scattering of charge carriers, resulting in a decrease in mobility
  • The reduction in mobility with increasing doping concentration is more pronounced for heavily doped semiconductors

Conductivity relation to mobility and carrier density

  • The conductivity (σ\sigma) of a semiconductor is directly proportional to the product of the concentration (nn or pp) and their respective mobility (μe\mu_e or μh\mu_h)
  • For n-type semiconductors: σ=qnμe\sigma = qn\mu_e, where qq is the elementary charge
  • For p-type semiconductors: σ=qpμh\sigma = qp\mu_h
  • Increasing either the carrier concentration or mobility will lead to an increase in conductivity

Applications of doped semiconductors

  • Doped semiconductors form the basis for a wide range of electronic devices and applications
  • The ability to control the type and concentration of charge carriers in semiconductors enables the creation of devices with specific electrical properties
  • Some key applications of doped semiconductors include p-n junctions, transistors, and solar cells

p-n junctions and diodes

  • A p-n junction is formed when a p-type semiconductor is brought into contact with an n-type semiconductor
  • The difference in carrier concentrations leads to a diffusion of electrons and holes across the junction, creating a depletion region and a built-in electric field
  • p-n junctions are the foundation for semiconductor diodes, which allow current to flow easily in one direction (forward bias) and block current in the reverse direction (reverse bias)

Bipolar junction transistors (BJTs)

  • BJTs are three-terminal devices consisting of two p-n junctions (npn or pnp) in close proximity
  • The three regions are called the emitter, base, and collector
  • BJTs can be used as amplifiers or switches, where a small current or voltage applied to the base can control a much larger current flowing between the emitter and collector
  • BJTs are used in a variety of analog and digital circuits, such as amplifiers, oscillators, and logic gates

Field effect transistors (FETs)

  • FETs are three-terminal devices that use an electric field to control the conductivity of a semiconductor channel
  • The two main types of FETs are junction field effect transistors (JFETs) and metal-oxide-semiconductor field effect transistors (MOSFETs)
  • In FETs, the current flow between the source and drain terminals is controlled by a voltage applied to the gate terminal
  • FETs are widely used in integrated circuits, such as microprocessors, memory devices, and power electronics

Photovoltaic solar cells

  • Photovoltaic solar cells convert light energy into electrical energy using the photovoltaic effect in semiconductors
  • A typical solar cell consists of a p-n junction, where the absorption of photons generates electron-hole pairs that are separated by the built-in electric field
  • The separated charge carriers flow through an external circuit, generating electricity
  • Doping concentrations and materials are optimized to maximize the efficiency of solar cells by increasing light absorption and charge carrier collection
  • Solar cells are used in a variety of applications, from small-scale consumer electronics to large-scale solar power plants
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© 2024 Fiveable Inc. All rights reserved.
AP® and SAT® are trademarks registered by the College Board, which is not affiliated with, and does not endorse this website.

© 2024 Fiveable Inc. All rights reserved.
AP® and SAT® are trademarks registered by the College Board, which is not affiliated with, and does not endorse this website.
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