Semiconductors are the backbone of modern electronics, with their unique band structure enabling precise control of electrical properties. This section explores intrinsic semiconductors, focusing on their band gaps, carrier generation, and Fermi levels.
Understanding intrinsic semiconductors is crucial for grasping more complex semiconductor physics. We'll examine how temperature affects carrier concentration, electrical , and optical properties, laying the groundwork for applications in solar cells, LEDs, and photodetectors.
Band structure of semiconductors
Condensed matter physics explores the electronic properties of materials, with semiconductors playing a crucial role in modern technology
Band structure forms the foundation for understanding semiconductor behavior, describing allowed energy states for electrons within the material
Valence and conduction bands
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represents the highest occupied energy level in semiconductors at absolute zero temperature
denotes the lowest unoccupied energy level where electrons can freely move and contribute to electrical conduction
Energy separation between these bands determines the electrical properties of the material (metals, semiconductors, insulators)
Electrons in the valence band are tightly bound to atoms, while those in the conduction band are delocalized
Band gap characteristics
defines the energy difference between the top of the valence band and the bottom of the conduction band
Measured in electron volts (eV), typical semiconductor band gaps range from 0.1 to 4 eV
Determines the minimum energy required for electronic excitation and influences optical and electrical properties
Band gap engineering allows for tailoring semiconductor properties for specific applications (optoelectronics, photovoltaics)
Direct vs indirect band gaps
Direct band gap materials have the conduction band minimum aligned with the valence band maximum in momentum space
Indirect band gap semiconductors have misaligned band extrema, requiring phonon assistance for transitions
Direct band gap materials (GaAs) exhibit stronger light absorption and emission, making them ideal for optoelectronic devices
Indirect band gap semiconductors (Si) generally have longer carrier lifetimes, beneficial for certain electronic applications
Electron-hole pair generation
generation is a fundamental process in semiconductor physics, driving the operation of many electronic devices
Understanding this mechanism is crucial for designing and optimizing semiconductor-based technologies in condensed matter systems
Thermal excitation process
Occurs spontaneously due to thermal energy in the crystal lattice
Probability of increases exponentially with temperature, following the
Generates intrinsic carriers in semiconductors, contributing to the material's conductivity
At room temperature, has approximately 1010 thermally generated electron-hole pairs per cubic centimeter
Optical excitation mechanisms
Involves absorption of photons with energy greater than or equal to the band gap
Creates electron-hole pairs by promoting electrons from the valence to the conduction band
Photon energy determines the depth of carrier generation within the semiconductor
Forms the basis for photovoltaic and photodetector devices
Carrier concentration equilibrium
Steady-state condition where generation and recombination rates of electron-hole pairs balance
Influenced by temperature, material properties, and external factors (light, electric fields)
Described by the mass action law: n0p0=ni2, where n0 and p0 are equilibrium electron and hole concentrations
Deviations from equilibrium drive current flow in semiconductor devices
Intrinsic carrier concentration
represents the number of electrons and holes present in a pure semiconductor at thermal equilibrium
This parameter is fundamental to understanding semiconductor behavior and device performance in condensed matter physics
Temperature dependence
Intrinsic carrier concentration increases exponentially with temperature
Follows the relationship ni∝T3/2exp(−Eg/2kT), where Eg is the band gap and k is Boltzmann's constant
Higher temperatures lead to more thermal excitations across the band gap
Silicon's intrinsic carrier concentration increases from 1010 cm⁻³ at room temperature to 1014 cm⁻³ at 150°C
Effective mass influence
Effective mass of electrons and holes affects the density of states and carrier
Lighter effective masses result in higher intrinsic carrier concentrations
Anisotropic effective masses in some semiconductors lead to direction-dependent electronic properties
GaAs has a lower electron effective mass than Si, contributing to its higher electron mobility
Density of states calculation
Density of states (DOS) describes the number of available energy states per unit energy and volume
For a 3D semiconductor, DOS is proportional to E1/2 near band edges
Intrinsic carrier concentration depends on the integral of DOS multiplied by the Fermi-Dirac distribution
Accurate DOS calculations are crucial for predicting carrier concentrations and device performance
Fermi level in intrinsic semiconductors
concept is central to understanding electron distribution in semiconductors and other condensed matter systems
In intrinsic semiconductors, the Fermi level position provides insights into carrier concentrations and material properties
Fermi-Dirac distribution
Describes the probability of electron occupancy for a given energy state at thermal equilibrium
Given by f(E)=1+exp((E−EF)/kT)1, where EF is the Fermi energy
Accounts for the Pauli exclusion principle and quantum mechanical effects
At T = 0 K, the distribution becomes a step function with all states below EF occupied and all above empty
Intrinsic Fermi level position
Located near the middle of the band gap in intrinsic semiconductors
Determined by the condition of charge neutrality: n=p=ni
Expressed as EF=2Ec+Ev+43kTln(me∗mh∗), where mh∗ and me∗ are effective masses
Slight deviation from exact midgap due to differences in effective masses and density of states
Temperature effects on Fermi level
Fermi level shifts towards the middle of the band gap as temperature increases
Rate of shift depends on the band gap and effective masses of the semiconductor
Influences the temperature dependence of carrier concentrations and device characteristics
In silicon, the intrinsic Fermi level moves by approximately 0.3 meV/K towards midgap with increasing temperature
Electrical conductivity
Electrical conductivity is a key property in condensed matter physics, determining how materials respond to applied electric fields
Understanding conductivity mechanisms in semiconductors is crucial for designing and optimizing electronic devices
Mobility of carriers
Describes the ease with which charge carriers move through the semiconductor lattice
Defined as the ratio of drift velocity to applied electric field: μ=vd/E
Influenced by various scattering mechanisms (phonon, impurity, carrier-carrier)
Electron mobility in silicon at room temperature is approximately 1400 cm²/(V·s), while hole mobility is about 450 cm²/(V·s)
Drift and diffusion currents
Drift current results from carrier motion due to an applied electric field
Diffusion current arises from carrier concentration gradients within the material
Total current density is the sum of drift and diffusion components: J=Jdrift+Jdiffusion
Drift-diffusion model forms the basis for many semiconductor device simulations
Conductivity vs temperature
Conductivity in intrinsic semiconductors increases with temperature due to increased carrier concentration
Follows an Arrhenius-like relationship: σ∝exp(−Eg/2kT)
At very high temperatures, conductivity may decrease due to increased phonon scattering
Silicon's conductivity increases by about an order of magnitude for every 50°C increase in temperature near room temperature
Optical properties
Optical properties of semiconductors are essential for understanding light-matter interactions in condensed matter systems
These properties form the basis for various optoelectronic devices and applications in modern technology
Absorption spectrum
Describes how light of different wavelengths is absorbed by the semiconductor
Absorption coefficient increases sharply for photon energies above the band gap
Indirect band gap materials (Si) have weaker absorption near the band edge compared to direct band gap materials (GaAs)
Absorption spectrum can be used to determine the band gap and electronic structure of semiconductors
Photoluminescence
Process where a semiconductor emits light after absorbing photons
Provides information about electronic states, impurities, and recombination mechanisms
Spectrum shape and intensity depend on material quality and temperature
Used as a non-destructive characterization technique in semiconductor research and quality control
Radiative recombination
Direct process where an electron in the conduction band recombines with a hole in the valence band, emitting a photon
Efficiency depends on the band structure and competing non-radiative processes
More prominent in direct band gap semiconductors (GaAs) compared to indirect band gap materials (Si)
Forms the basis for light-emitting diodes (LEDs) and semiconductor lasers
Common intrinsic semiconductors
Intrinsic semiconductors play a crucial role in condensed matter physics research and technological applications
Understanding the properties of various semiconductor materials enables the design of advanced electronic and optoelectronic devices
Silicon vs germanium
Silicon dominates the semiconductor industry due to its abundance and suitable band gap (1.12 eV at 300 K)
has a smaller band gap (0.66 eV at 300 K) and higher carrier mobilities
Si forms a stable oxide (SiO₂), crucial for MOSFET technology, while Ge lacks a stable native oxide
Ge has higher intrinsic carrier concentration, making it more sensitive to temperature variations
Compound semiconductors
Formed by combining elements from groups III and V (GaAs, InP) or II and VI (CdTe, ZnSe) of the periodic table
Offer a wide range of band gaps and electronic properties not available in elemental semiconductors
GaAs (1.42 eV band gap) is widely used in high-speed electronics and optoelectronics
InP-based compounds find applications in long-wavelength optical communication systems
Wide band gap materials
Semiconductors with band gaps significantly larger than silicon (typically > 2 eV)
Include materials like GaN (3.4 eV), SiC (3.3 eV), and diamond (5.5 eV)
Offer advantages in high-power, high-temperature, and high-frequency applications
Exhibit strong chemical bonds, making them resistant to radiation damage and chemical degradation
Intrinsic vs extrinsic comparison
Comparing intrinsic and extrinsic semiconductors is essential for understanding how doping affects material properties
This comparison forms the basis for designing and optimizing various semiconductor devices in condensed matter physics
Carrier concentration differences
Intrinsic semiconductors have equal electron and hole concentrations (n = p = nᵢ)
Extrinsic semiconductors have unequal carrier concentrations due to intentional doping
n-type materials have electron concentrations much higher than hole concentrations (n >> p)
p-type materials have hole concentrations much higher than electron concentrations (p >> n)
Fermi level position
Intrinsic Fermi level lies near the middle of the band gap
In n-type semiconductors, Fermi level shifts towards the conduction band
p-type materials have Fermi levels closer to the valence band
Fermi level position determines the equilibrium carrier concentrations and influences device behavior
Electrical characteristics
Intrinsic semiconductors have lower conductivity compared to extrinsic ones at room temperature
Extrinsic semiconductors offer better control over electrical properties through doping
Temperature dependence of conductivity is stronger in intrinsic semiconductors
Extrinsic semiconductors maintain more stable electrical characteristics over a wider temperature range
Applications and devices
Semiconductor applications form the backbone of modern electronics and optoelectronics industries
Understanding device physics is crucial for advancing condensed matter research and developing new technologies
Solar cells
Convert light energy into electrical energy using the photovoltaic effect
Efficiency depends on material properties, cell design, and light spectrum
Silicon dominates the market, with single-junction cell efficiencies reaching 26%
Multi-junction cells using III-V compounds achieve efficiencies over 40% under concentrated sunlight
Photodetectors
Convert optical signals into electrical signals for various sensing applications
Types include photodiodes, phototransistors, and avalanche photodiodes
Spectral response depends on the semiconductor band gap and device structure
InGaAs photodetectors are widely used in optical communication systems for near-infrared detection
Light-emitting diodes
Emit light when an electric current passes through a forward-biased p-n junction
Color of emitted light depends on the semiconductor band gap
GaN-based LEDs have revolutionized solid-state lighting with high-efficiency blue and white light emission
Organic LEDs (OLEDs) offer flexible, thin displays for mobile devices and televisions